| 摘要 |
According to this invention, a monolithic integrated circuit device includes a semiconductor element, a metal ground film and a plurality of electrodes of the semiconductor element, first and second microstrip conductors, and a pair of via hole circuits. A semiconductor element is formed in a predetermined region on the first surface of a semi-insulating compound semiconductor substrate. A metal ground film and a plurality of electrodes of the semiconductor element are independently formed on the first surface of the semiconductor substrate. First and second microstrip conductors are formed on the second surface of the semiconductor substrate. A pair of via hole circuits connect the microstrip electrodes to input and output electrodes of the high-power semiconductor element, respectively.
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