发明名称 |
Field oxide termination and gate oxide formation |
摘要 |
A method of treating the sidewalls of a transistor site aperture to form a gate insulator and increase the resistivity of the aperture sidewalls simultaneously combines an initial thin layer of thermal oxide with a thicker layer of pyrogenic oxide and a final layer of thermal oxide.
|
申请公布号 |
US5187113(A) |
申请公布日期 |
1993.02.16 |
申请号 |
US19910701739 |
申请日期 |
1991.05.17 |
申请人 |
UNITED TECHNOLOGIES CORPORATION |
发明人 |
TYSON, SCOTT M.;WODEK, GARY M. |
分类号 |
H01L21/336;H01L21/84;H01L29/49 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|