Composite semiconductor structure for reducing scattering of carriers by optical phonons and a semiconductor device that uses such a composite semiconductor structure.

摘要

A semiconductor structure comprises a first material layer (11) of a homopolar material having a conduction band that includes an L valley and a GAMMA valley such that the L valley has an energy level (EL) lower than the GAMMA valley (E GAMMA ) when in a bulk crystal state, and a second material layer (12) of a polar compound formed with an epitaxial relationship with respect to the first material layer; wherein the first material layer has a thickness (d11) such that there is formed first and second quantum levels (Q GAMMA , QL) respectively in correspondence to the GAMMA valley and the L valley such that the second quantum level (QL) has an energy level higher than the first quantum level (Q GAMMA ). <IMAGE>