发明名称 |
LIQUID PHASE GROWTH METHOD |
摘要 |
PURPOSE:To improve quality and yield of a compound semiconductor by effectively suppressing occurrence of face defect in liquid phase growth of the compound semiconductor. CONSTITUTION:In liquid phase growth of a compound semiconductor, an atmosphere around a substrate and a solution before start of the growth is kept by a mixed gas consisting of >=80% hydrogen and an inert gas of the residual part or 100% hydrogen, and the atmosphere is changed over to a mixed gas consisting of <=60% hydrogen and an inert gas of the residual part immediately before start of growth. |
申请公布号 |
JPH0532481(A) |
申请公布日期 |
1993.02.09 |
申请号 |
JP19910212848 |
申请日期 |
1991.07.29 |
申请人 |
SHIN ETSU HANDOTAI CO LTD |
发明人 |
YANAGISAWA MUNEHISA;HIGUCHI SUSUMU;NAKAMURA AKIO;OTAKI NORIO |
分类号 |
C30B19/00;C30B19/04;C30B19/10;C30B27/00;C30B29/44;H01L21/208 |
主分类号 |
C30B19/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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