发明名称 LIQUID PHASE GROWTH METHOD
摘要 PURPOSE:To improve quality and yield of a compound semiconductor by effectively suppressing occurrence of face defect in liquid phase growth of the compound semiconductor. CONSTITUTION:In liquid phase growth of a compound semiconductor, an atmosphere around a substrate and a solution before start of the growth is kept by a mixed gas consisting of >=80% hydrogen and an inert gas of the residual part or 100% hydrogen, and the atmosphere is changed over to a mixed gas consisting of <=60% hydrogen and an inert gas of the residual part immediately before start of growth.
申请公布号 JPH0532481(A) 申请公布日期 1993.02.09
申请号 JP19910212848 申请日期 1991.07.29
申请人 SHIN ETSU HANDOTAI CO LTD 发明人 YANAGISAWA MUNEHISA;HIGUCHI SUSUMU;NAKAMURA AKIO;OTAKI NORIO
分类号 C30B19/00;C30B19/04;C30B19/10;C30B27/00;C30B29/44;H01L21/208 主分类号 C30B19/00
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