发明名称 SEMICONDUCTOR ELEMENT HAVING DISTORTION QUANTUM WELL STRUCTURE
摘要 PURPOSE:To eliminate a disadvantage of distortion quantum well structure that mismatching of lattice (distortion) is gradually eased and quantum effect can be reduced as the crystals are laminated. CONSTITUTION:In a semiconductor element having distortion quantum well structure, a semiconductor of mixed crystal having the structure showing a little mismatching of lattice with a semiconductor substrate 10 is used as barrier layers 61 to 66.
申请公布号 JPH0529715(A) 申请公布日期 1993.02.05
申请号 JP19910186174 申请日期 1991.07.25
申请人 NEC KANSAI LTD 发明人 TAKANO SHINJI
分类号 H01L21/20;H01L33/06;H01L33/10;H01L33/30;H01S5/00 主分类号 H01L21/20
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