| 摘要 |
A cold cathode for electron emission from CRT is characterized by (A) forming a SiO2 layer (2) on n-type silicon substrate (1), which is doped with a pentavalent element such as As or Bi, by high-temperature oxidation, (B) photoetching the SiO2 layer (2), (C) forming a 100-1000 angstrom SiO2 layer (3) by high- temperature oxidation, and (D) depositing metal (tungsten, nickel, chromium, aluminum and so on) on the bottom sides of (3) and (1) by sputtering to form electrodes (4,5). The produced cold cathode can emit electrons as rapidly as the voltage is applied an reduce the power consumption to a minimum.
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