发明名称 POLAR PROGRAMMABLE CIRCUIT
摘要 The circuit is for changing polarity of external control signal of mask ROM oby ion injection method. The circuit comprises a first transistor having drain connected to source voltage, and a gate and a source connected to an output node, and a second transistor having a drain connected to an output node, and a gate and a source connected to ground. The level of output node is determined by the combination of type of the transistors, for source voltage level output, a first depletion transistor and a second enhancement transistor combination are used and for ground level output, a first enhancement transistor and a second depletion transistor combination are used.
申请公布号 KR920009605(B1) 申请公布日期 1992.10.21
申请号 KR19890012537 申请日期 1989.08.31
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HWANGBO, JUN - SHIK;CHOE, JONG - DAL
分类号 G11C15/00;(IPC1-7):G11C15/00 主分类号 G11C15/00
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