发明名称 |
POLAR PROGRAMMABLE CIRCUIT |
摘要 |
The circuit is for changing polarity of external control signal of mask ROM oby ion injection method. The circuit comprises a first transistor having drain connected to source voltage, and a gate and a source connected to an output node, and a second transistor having a drain connected to an output node, and a gate and a source connected to ground. The level of output node is determined by the combination of type of the transistors, for source voltage level output, a first depletion transistor and a second enhancement transistor combination are used and for ground level output, a first enhancement transistor and a second depletion transistor combination are used.
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申请公布号 |
KR920009605(B1) |
申请公布日期 |
1992.10.21 |
申请号 |
KR19890012537 |
申请日期 |
1989.08.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HWANGBO, JUN - SHIK;CHOE, JONG - DAL |
分类号 |
G11C15/00;(IPC1-7):G11C15/00 |
主分类号 |
G11C15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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