| 摘要 |
For decreasing current consumption, a random access memory device comprises a plurality of static memory cells arranged in matrix, a plurality of digit line pairs respectively coupled to the columns of the memory cells for propagating data bits to a column selector unit, and a set of high-impedance and low-impedance current charging circuits coupled to each of the bit line pairs, in which the low-impedance current charging circuit supplies current to one of the bit line pairs selected by the column selector unit and the other non-selected bit line pairs are supplied from the associated high-impedance current charging circuits.
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