| 摘要 |
<p>PURPOSE:To form a board even including many thin film wiring layers with the high yield in a short time by heating and bonding electrodes each comprising thin film metal at a temperature lower than the glass transition point of a polyimide resin film. CONSTITUTION:An Au bump 16 is formed on the surface of a connection pad 15 of a thin film unit 14 composed of a Cu wiring 12 and a polyimide insulating film 13 both formed on a tentative board 11. Then, after stamping of a bump 16 there are subjected to thermocompression bonding a ceramic board 20 including a metallized layer 18 and an internal layer wiring 19, and a thin film unit 14. For heating temperature at that time there is selected a temperature lower than a glass transition point of the polyimide insulating film 13, say 280. After the tentative board 11 is etched and removed, a surface layer 21 is formed. Further, an LSI 23 is mounted using a solder bump 22 to yield a predetermined mounting board 24.</p> |
