| 摘要 |
A ferroelectric space charge capacitor memory system includes a ferroelectric space charge capacitor memory cell having two ferroelectric space charge capacitor memory devices; means for applying coercive write voltage to each of the memory devices to establish internal polarization fields and space charge regions of opposite polarity in each device, respectively; means for applying to each of the devices a bias voltage less than the coercive voltage at a rate slower than the rate of space charge formation to define a capacitive level representative of one of the polarization states; means for introducing to each of the devices a read signal at a rate faster than the rate of space charge formation, which together with the bias voltage is less than the coercive voltage; and means responsive to the read signal for indicating the difference in charge transferred by each memory device representing the logical state of the memory cell.
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