发明名称 Manufacturing process of a high density substrate design
摘要 Substrate layers with individual bumps and cavities are provided which can be manufactured and tested in parallel and then joined into a multilayer substrate. The method of manufacturing these layers, as contemplated by the present invention, includes initially forming a plurality of vias in a layer of electrically conductive material. Next, a dielectric material, is placed adjacent the layer of conductive material. Holes which are coaxial with the vias are then formed in the dielectric material. Electrically conductive material is then deposited within the vias, thereby forming a conductive stud. Additional electrically conductive material is then deposited, on the side of the dielectric opposite the conductive material to form a signal layer, as well projections of electrically conductive material extending from the studs. A continuous layer of dielectric material is then placed adjacent the side of the substrate opposite the projections. A portion of this layer, adjacent the stud, is then removed, thereby exposing the stud and forming a cavity. The substrate layers can then be joined to form a multilayer substrate module.
申请公布号 US5146674(A) 申请公布日期 1992.09.15
申请号 US19910724245 申请日期 1991.07.01
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 FRANKENY, RICHARD F.;HERMANN, KARL;IMKEN, RONALD L.;LATORRE, JOSEPH
分类号 H01L21/48;H01L23/538;H05K3/00;H05K3/20;H05K3/42;H05K3/44;H05K3/46 主分类号 H01L21/48
代理机构 代理人
主权项
地址