| 摘要 |
A device capable of accurate temperature measurement down to 0.01 DEG K. of an object whose temperature is to be measured consisting of a heat sink wafer a first conducting pad bonded near one end of the heat sink wafer and a second conducting pad bonded near the other end of the heat sink wafer, an oblong doped semiconductor crystal such as germanium, the oblong doped semiconductor crystal has a third conducting pad bonded on its top surface and a fourth conducting pad bonded on its bottom surface with the oblong doped semiconductor crystal bonded to the heat sink wafer by having the fourth conducting pad bonded to the first conducting pad, a wire bonded between the second and third conducting pads, and current and voltage applying wires bonded to the first and second conducting pads whereby the change in resistance of the oblong doped semiconductor crystal indicates the temperature of an object whose temperature is to be measured.
|
