发明名称 |
Method of making resist pattern |
摘要 |
A thin film of conductive high molecular compound is formed on a substrate such as Si followed by a heat treatment, and thereafter an electron beam exposure and subsequent development are made, to form pattern of the thin film of conductive high molecular compound; this method can eliminate forming of metal film to prevent the electron charge, can prevent charging of resist in electron-beam exposure or further prevent proximity effect when combined with deep ultraviolet light exposure.
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申请公布号 |
US5139922(A) |
申请公布日期 |
1992.08.18 |
申请号 |
US19900602930 |
申请日期 |
1990.10.25 |
申请人 |
MATSUSHITA ELECTRONICS CORPORATION;TOSOH CORPORATION |
发明人 |
WATANABE, HISASHI;TODOKORO, YOSHIHIRO;HASEGAWA, MASAZUMI;FUKUDA, MITSUTOSHI |
分类号 |
G03F7/09;G03F7/20 |
主分类号 |
G03F7/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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