发明名称 Method of making resist pattern
摘要 A thin film of conductive high molecular compound is formed on a substrate such as Si followed by a heat treatment, and thereafter an electron beam exposure and subsequent development are made, to form pattern of the thin film of conductive high molecular compound; this method can eliminate forming of metal film to prevent the electron charge, can prevent charging of resist in electron-beam exposure or further prevent proximity effect when combined with deep ultraviolet light exposure.
申请公布号 US5139922(A) 申请公布日期 1992.08.18
申请号 US19900602930 申请日期 1990.10.25
申请人 MATSUSHITA ELECTRONICS CORPORATION;TOSOH CORPORATION 发明人 WATANABE, HISASHI;TODOKORO, YOSHIHIRO;HASEGAWA, MASAZUMI;FUKUDA, MITSUTOSHI
分类号 G03F7/09;G03F7/20 主分类号 G03F7/09
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