SEMICONDUCTOR DEVICE HAVING MULTILAYERED INTERCONNECTION STRUCTURE AND ITS MANUFACTURE

摘要

PURPOSE:To provide a protection layer on the side wall of a first interconnection layer. CONSTITUTION:A first interconnection layer 13 is side-walled with an amorphous silicon layer 14 and spread with a silicon layer 15 so as to coat this first interconnection layer 13 and this amorphous silicon layer 14. This silicon oxide film 15 is pierced by a through hole 16 to expose a partial surface of the above- mentioned interconnection layer 13: this through hole 16 is filled with a tungsten layer 17, and the silicon oxide film 15 is overlaid with a second interconnection layer 18 partially connected to this tungsten layer 17.