发明名称 |
SEMICONDUCTOR OPTICAL SWITCH |
摘要 |
<p>PURPOSE:To provide the semiconductor switch having a large extinction ratio and small operating light energy by improving the structure of a semiconductor element. CONSTITUTION:This semiconductor optical switch has the semiconductor element constituted with a transistor by laminating an emitter consisting of n-Al0.3Ga0.7 As 1, a base consisting of p-AlxGa1-xAs 2 and a collector consisting of an i-MQW layer 3, n-DBR 4 and n-GaAs 5 in this order or the semiconductor element constituted with a thyristor of p-GaAs in place of the n-GaAs 5 of the above-mentioned semiconductor element and controls the reading out light of a 2nd wavelength by the control light of a 1st wavelength. The transistor of the above-mentioned switch is operated by using the i-MQW layer as a light absorptive layer, by which the operating light energy is decreased. The extinction ratio is increased by acting the n-DBR as a reflection mirror for reading out light.</p> |
申请公布号 |
JPH04213432(A) |
申请公布日期 |
1992.08.04 |
申请号 |
JP19900406203 |
申请日期 |
1990.12.07 |
申请人 |
NIPPON TELEGR & TELEPH CORP <NTT> |
发明人 |
SUSA NOBUHIKO;OMACHI TOKURO |
分类号 |
G02F1/35;G02F1/015;G02F3/02;H01L31/14 |
主分类号 |
G02F1/35 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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