发明名称 |
Process for forming deposition film. |
摘要 |
<p>A process for forming a deposition film comprising aluminum comprises the steps of: treating chemically a surface of a substrate having an electron-donative surface and a non-electron-donative surface so as to terminate the electron-donative surface with hydrogen atoms, and thereafter placing the substrate in a space for deposition film formation; introducing gas comprising alkylaluminum hydride and hydrogen gas into the space for deposition film formation; and forming an aluminum film selectively on the electron-donative surface by maintaining the substrate at a temperature in the range of from not lower than the decomposition temperature of the alkylaluminum hydride to not higher than 450 DEG C. <IMAGE></p> |
申请公布号 |
EP0493002(A1) |
申请公布日期 |
1992.07.01 |
申请号 |
EP19910311832 |
申请日期 |
1991.12.19 |
申请人 |
TSUBOUCHI, KAZUO |
发明人 |
TSUBOUCHI, KAZUO;MASU, KAZUYA |
分类号 |
C23C16/02;C23C16/20;C30B25/04;H01L21/205;H01L21/28;H01L21/285;H01L21/306;H01L21/3205;H01L21/768 |
主分类号 |
C23C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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