| 摘要 |
1,191,172. Etching. NORTH AMERICAN ROCKWELL CORP. 9 June, 1967 [13 June, 1966], No. 26820/67. Heading B6J. The surfaces of refractory inorganic oxide materials are etch-polished by exposing the material to a gaseous sulphur fluoride at temperatures between 1150‹ and 1600‹ C. Specified oxides are sapphire (aluminium oxide), beryllium oxide, thorium oxide, zirconium oxide, spinels and chrysoberyl; the temperature of the process is preferably between 1300‹ and 1600‹ C.; and the gaseous etchant is preferably sulphur tetra- or hexa-fluoride in a diluent which may be hydrogen, helium, argon or nitrogen. The material etch-polished may be the sides and ends of ruby laser rods. Apparatus (Fig. 1).-The refractory material 1 to be etch-polished is placed inside a reactor 2 on a pedestal 3 and separated therefrom by a spacer 4; a preferred pedestal is made of carbon, silicon or molybdenum which is inductively heated by coil 5; the spacer 4 is preferably of a material similar to that being etch-polished, e.g. alumina. The etchant gas source 7 and the carrier gas source 10 are connected through valves 8, 11 and flow meters 9, 12 to channel 6 and the reactor, before being exhausted through channel 13. Channel 14 and valve 15 allow the introduction of semi-conductor deposition materials subsequent to the etch-polishing.
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