发明名称 Wide dynamic range transconductance stage.
摘要 <p>A wide dynamic range transconductance stage has two branches, each branch being composed of a plurality of transconductance circuit paths. Each circuit path has a greater transconductance than the other circuit paths for its branch within a respective sub-range of the input signal range for the stage as a whole, with each path dominating the other paths for its branch within its respective sub-range. The overall bandwidth for the stage, its gm, its noise characteristics and its input voltage range are enhanced as a result. Bandwidth and slew rate may be independently optimized by the designer. Two paths are used for each branch in the preferred embodiment, with one path consisting of a bipolar transistor (Q3,Q4) and the other path either a field effect transistor (J3,J4) or a resistor degenerated bipolar transistor (Q5,R5;Q6,R6). Multiple paths may be used based on the same principle. &lt;IMAGE&gt;</p>
申请公布号 EP0481631(A2) 申请公布日期 1992.04.22
申请号 EP19910309010 申请日期 1991.10.02
申请人 ANALOG DEVICES, INCORPORATED 发明人 BUTLER, JAMES R.;SMITH, DOUGLAS S.
分类号 H03F3/343;H03F3/345;H03F3/45 主分类号 H03F3/343
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