| 摘要 |
PURPOSE:To form a good capacitive insulating film by a method wherein, after a silicon nitride film has been formed, the nitride film is oxidized by using the same apparatus, or, after a polysilicon electrode and a silicon nitride film have been formed, the nitride film is oxidized by using the same apparatus or is transferred, under a reduced pressure, between a film formation apparatus and an oxidation treatment apparatus. CONSTITUTION:An SiO2 film 21 which has been opened in one part of an Si substrate 20 is formed. This assembly is placed on a substrate holder 10. SiH4 gas and PH3 gas are controlled to 620 deg.C under a definite vacuum. A poly-Si electrode 22 is formed. In succession, the gases are evacuated. After that, an Si nitride film 23 is formed at 750 deg.C by using SiH2Cl2 gas an NH3 gas. The gases are evacuated; an Si oxide film 24 is formed at 850 deg.C by O2 gas. Without breaking the vacuum, a capacitive region is patterned by using a photoresist 25. The Si oxide film 24, the Si nitiride film 23 and the poly-Si electrode 22 are etched. The sidewall part of the poly-Si electrode 22 is etched; a poly-Si electrode 26 is formed. A photoresist 27 is patterned; the poly-Si electrode 26 is etched; a capacitive part is completed. |
