发明名称 DIVIDING METHOD OF SEMICONDUCTOR WAFER
摘要 <p>PURPOSE:To prevent cracks from occurring in a semiconductor wafer other than a predetermined dividing line by a method wherein an adhesion preventing means of metal is provided between an organic polymer film and a scribe table. CONSTITUTION:An aluminum foil 4 on which a GaAs wafer 1 is placed and an organic high molecular film 3 are surely fixed onto a scribe table 5 by suction. After the GaAs wafer 1 is fixed by suction, the other primary surface of the wafer 1 is scribed along a predetermined dividing line by pressing a scriber 6 provided with a diamond point against the wafer 1. At this point, even if a pressing force is applied onto the GaAs wafer 1, as the aluminum foil 4 is provided, the organic high molecular film 3 on which the GaAs wafer 1 is pasted is prevented from adhering to a scribe table 5. Therefore, after a scribe process is finished, a vacuum pump is turned OFF to stop a sucking operation, and when the organic high molecular film 3 is separated from the scribe table 5, an force is prevented from being unnecessarily applied onto the GaAs wafer 1, so that cracks are prevented from occurring in the wafer 1 other than a predetermined dividing line.</p>
申请公布号 JPH04114448(A) 申请公布日期 1992.04.15
申请号 JP19900233130 申请日期 1990.09.05
申请人 NIPPON MINING CO LTD 发明人 TAKAGI AKIO
分类号 H01L21/301;H01L21/78 主分类号 H01L21/301
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