| 摘要 |
PURPOSE:To prevent recombination of minority carrier near a light receiving surface by reducing a shortest distance from an arbitrary position of a first conductivity type semiconductor substrate to a junction surface to be formed of a second conductivity type semiconductor layer from a diffusing distance of the minority carrier in the first conductivity type semiconductor substrate. CONSTITUTION:For example, diffusing distance of minority carrier in a P-type semiconductor substrate is 160-170mum, and an interval of through holes 1 is 70mum, and aligned in a square matrix state. Thus, distances from positions in the substrate to N-P junction to be formed to the substrate by an N<+> type semiconductor diffused layer 2 of the inner wall of the hole is about 45mum at the farthest, and collecting efficiency of the carrier is improved. The relationship between the farthest distance from the N-P junction and a short-circuiting current is improved in characteristic if the longest distance (x) is reduced, thereby becoming a distance capable of obtaining a maximum short-circuiting current. |
