HALBLEITERBAUELEMENT HOHER ZUVERLAESSIGKEIT

摘要

A semiconductor device comprises a first conductive type semiconductor substrate (20), second conductive type shallow junction regions (22a; 22b) forming the source and drain of a MOSFET, low resistant wiring layers formed on the semiconductor substrate (20) contacting the source and drain, and second conductive type deep junction regions (26a; 26b). The deep junction regions (26a; 26b) under the source and drain contacts (24a, 24b) are formed sufficiently to protect the channel of the MOSFET from junction spiking, so that the electrostatic damage (ESD) characteristic is enhanced with simple layout change of the semiconductor device.