| 摘要 |
PURPOSE:To form various kinds of patterns without using any organic photoresist and organic solvent in the least by providing a photosensitive inorganic semiconductor on a semiconductor substrate and bringing the organic semiconductor into contact with an electrolyte so as to emit light having energy stronger than the band gap of the inorganic semiconductor. CONSTITUTION:After a gold layer 2 is formed on an insulating substrate 1 as a conductive metallic layer and a p-type silicon layer 3 is deposited on the layer 2, a tungsten oxide layer is formed as one of the n-type semiconductor layers 9 made of a photosensitive material. Then the substrate 1 is dipped in an electrolyte 11 and the semiconductor 9 is irradiated with ultraviolet rays by using a photomask 10. As a result, the part irradiated with the ultraviolet rays is removed and the p-type silicon film 3 is exposed. An n-type silicon layer 4 is formed to a desired shape by depositing the layer 4 and removing the remaining n-type photosensitive semiconductor layer 9. After another n-type photosensitive semiconductor layer 9 is vapor-deposited, a desired p-type silicon 5 pattern is formed in the same way. After forming the silicon 5 pattern, an n-type photosensitive semiconductor 9 is vapor-deposited and the semiconductor 9 is irradiated with ultraviolet rays so as to form a desired pattern. After forming the desired pattern, gold is vapor-deposited and tungsten oxide is again etched. Thus a field effect transistor is produced. |
