| 摘要 |
PURPOSE:To restrain the insulation breakdown due to the hole accumulation in the case a silicon oxide film is impressed with high electric field by a method wherein an oxide film containing at least silicon is implanted with hydroxide ions or chlorine ions to be heat-treated later. CONSTITUTION:Firstly, a substrate l comprising p-type Si(100) is used and then a silicon oxide film 2 in thickness of e.g. 20nm is formed on the substrate 1 in dried up atmosphere at e.g. l000 deg.C. Next, the silicon oxide film 2 is ion- implanted with OH<-> at the angle of 7 deg. and the energy of 10KeV to obtain the OH<-> containing silicon oxide film 2a. Next, this silicon oxide film 2a is used as a gate oxide film on an accumulated capacitor oxide film. When OH<-> is implanted, the accumulated breakage ratio can be notably reduced much lower than that in the case nothing is implanted extending the time reaching e.g. 5% breakdown to about 1000 times. |
