| 摘要 |
PURPOSE:To make the characteristic good at a junction part to a CuInSe2 polycrystalline thin film, to reduce a forward leakage current and to enhance an open-circuit voltage by a method wherein a polycrystalline thin film formed of a chalcopyrite material whose crystal structure is the same as that of CuInSe2, whose lattice constant is close to that of it and whose difference in a band gap to CuInSe2 is small is used as a window layer. CONSTITUTION:A polycrystalline thin film of a chalcopyrite material having a band gap of 1.45eV or higher is used as a window layer which forms a p-n junction to a polycrystalline thin film of CuInSe2. An Mo layer 2 is vapor- deposited on a glass substrate 1; then, a CuInSe2 layer 3 is formed by using a vapor-deposition method, a sputtering method or the like. A layer 6 of CuInSe2, CuGaSe2 or AgGaSe2 of the chalcopyrite material is formed. However, it is required to control a composition ratio at this time and to form the layer 6 as an n-type. A p-n junction is completed between the layer and the CuInSe2 layer 3. A ZnO layer 5 is formed on it by using a sputtering method; it is used as a transparent electrode layer. |
