Method for producing high silicon steel strip in a continuously treating line

摘要

The present invention relates to a method for producing high silicon steel strip in a continuous treatment line through chemical vapor deposition (called "CVD" hereinafter), wherein the steel strip is subjected continuously to siliconization at temperatures between 1023 DEG and 1200 DEG C. by CVD in a non-oxidizing gas atmosphere containing SiCl4 between 5% and 35% in molar fraction. Subsequently a diffusion treatment is performed in a non-oxidizing gas atmosphere not containing SICl4 for diffusing Si uniformly throughout the steel strip, which is then cooled and coiled. If required, the steel strip may be coated with an insolating film and subjected to a baking treatment, before cooling and coiling.