| 摘要 |
PURPOSE:To carry out polishing at a high yield at a low cost, in subjecting a thin crystal wafer to precise polishing processing, by providing a stopper plate having an area larger than a half area of the wafer around said wafer. CONSTITUTION:The work of a thin wafer such as crystal or the like is adhered to a base plate 4 by a wax or the like and, onto a soft cloth 6 adhered to a polishing surface plate 7, a polishing material such as CeO2 or the like is supplied to carry out the polishing. In this time, when a constant load is added to the base plate from a back surface thereof, the work 1 sinks in the cloth 6 to rotate the surface plate 7 and, at the same time, a correcting ring 5 is also rotated alont with said surface plate. In this case, the load applied to the base plate 4 is transmitted to a stopper plate 2 through a stopper pin 3 but, by making an area of the stopper plate 2 larger than a half area of the work 1, said work 1 is uniformly sunk in the cloth 6 and inclination of the base plate 4 and the work 1 is subjected to orbit correction by the stopper plate 2 and a thin wafer with excellent thickness preciseness can be prepared at a high yield. |
