| 摘要 |
A semiconductor device wherein mxn switch means connected to mxn functional elements for transferring signals by switching, and a matrix wiring section having wiring connected respectively to said mxn switching means are formed on a common substrate, and wherein said matrix wiring section comprises a lamination structure formed by stacking, at least, a first conductive layer, a first insulating layer, a second conductive layer, a second insulating layer, a semiconductor layer, and a third conductive layer in this order.
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