| 摘要 |
PURPOSE:To form elements on the same substrate by providing multiple semiconductor crystal layer which is ohmic-contacted with the respective regions of the surfaces of a bipolar transistor and MOSFETs. CONSTITUTION:An SiO2 film 8 on the gate regions of the P channel MOSFET and the N channel MOSFET is removed and a gate oxide film 20 is formed. Then the film 8 is selectively etched, and a collector electrode window 21, an emitter electrode window 22, a base electrode window 23, and windows 24-27 in source and drain regions are opened. Then, a poly crystal Si layer 28 is formed on the entire surface including the windows 21-27. After a PSG film 29 has been formed on the layer 28, the film 29 at the parts of windows 24 and 25 are removed. Then, phosphorus is diffused to the surface of the layers of the window parts 21, 22, 26, and 27 through the layer 28 directly below the PSG29 by performing heat treatment. Then an N type, highly concentrated, collector contat layer 30, an emitter region 31, a source and drain contact layers 32 and 33 are formed. In the meantime, P type impurities are diffused to the parts of the layer 28 which are directly contacted with the P type region of the windows 23-25, and P type is obtained. |
