| 摘要 |
PURPOSE:To form large and small resist patterns with the same accuracy by selectively silylating the exposed or unexposed parts of a resist and forming a silylated layer after the resist on a substrate is selectively exposed, and concurrently etching the organic resin of a lower layer. CONSTITUTION:The organic resin 3 as the lower layer is applied on a silicon substrate 1, and a selective silylating resist 4 is applied thereon. After the resist is selectively exposed, the selective silylating resist 4 is silylation-processed and the exposed parts 41 and 42 are transformed into silylated parts 43 and 44, which are vertically plasma-etched by an oxgen-reactive ion plasma etching method. Consequtively, the unexposed parts are eliminate from the resist 4, and SiO2 films are formed on the surfaces of the silylated parts 43 and 44, which remain without being etched and the resist patterns contg. the organic resin 3 are formed on its just under parts. Thus, the large and small resist patterns can be formed with the same accuracy. |
