SEMICONDUCTOR INTERCONNECT STRUCTURE UTILIZING A POLYIMIDE INSULATOR

摘要

A semiconductor structure is provided including a substrate of semiconductor material including a device region on a surface of the substrate whereat it is desired to provide a conductive contact. A planarized layer of polyimide is disposed over the surface of the substrate, and a layer of inorganic material is disposed over the polyimide layer. An aperture is formed in the layer of polyimide exposing the device region, and a lining of metal is formed over the surface of the aperture in the polyimide layer so as to provide a diffusion barrier. A layer of refractory metal fills the lined aperture in the polyimide layer so as to form a conductive contact to the device region.