MOS semiconductor circuit element - uses voltage control element in upper surface of substrate

摘要

The Insulated Gate Bipolar Transistor (IGBT) with Mos structure, comprises a semi-conductor substrate (2) of a first conductor type, a first region (11) of a second conductor type, and a second region (12) of a first conductor type with higher carrier concentration (the second region is between the first regions). - A single crystalline layer (14) on an isolation layer (13) on the top layer of substrate (2) overlaps regions (11 12). Source and dFj FO0S 1 1 FS.= are formed in the layer (14) with connection to regions (11, 12 resp.). The gate electrode (18) is constructed on isolation layer (17).