| 摘要 |
PURPOSE:To prevent the erroneous operation due to abnormal voltage as well as to contrive prevention of breakage of a gate oxide film by a method wherein a schottky contact is provided between the substrate of MOSIC and an input and output terminal. CONSTITUTION:A Schottky electrode 36, whereon a Schottky contact is formed on the surface of the semiconductor substrate 10 using a metal such as Al, Ni, Au and the like, is connected to the output terminal 34 of CMOS. When an abnormally high voltage is applied to the output terminal 34, the forward voltage of the Schottky contact can be made lower than that of a P-N junction, and therefore, an electron flows to the Schottky electrode 36, through the intermediary of the Schottky contact, before the Hall is injected from a drain region 18 to a P-region 24 through the intermediary of the substrate 10, and the voltage of output terminal 34 can be dropped. |
