| 摘要 |
In a method of manufacturing a solid-state , particularly a semiconductor device, comprising the steps of treating a surface of a carrier body, covering the treated surface with an active layer system including at least one thin layer, the active layer system determining an outer surface of the device, then depositing a covering thin layer on the outer surface, at least partly at least one of the thin layers is doped or connected with an isotope having decay product influencing at least one predetermined physical property of a selected thin layer, the isotope being present in an amount causing modification of the predetermined physical property after a predetermined period. The proposed solid-state device, comprising a carrier body, a thin layer system including at least one thin layer determining an outer surface of the device and a covering layer for protecting the outer surface, is completed or made with an inner part or at least one thin layer including at one or more radioactive doping component for influencing at least one characteristic physical property of the active layer system. Fig. 2
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