| 摘要 |
PURPOSE:To obtain the above ohmic electrode which has a good ohmic characteristic and adhesive strength and is flat by depositing the thin film of an Au-Be alloy contg. a prescribed amt. of Be on p type cBN and depositing the thin film of Ni, Cr, Mo or Pt thereon, then heat treating the films under specific conditions. CONSTITUTION:The thin film 2 of the alloy having 0.1 to 15wt.% weight ratio of Be and consisting of the Au and Be is deposited on the p type cBN crystal 1. The thin film 3 consisting of one kind among the Ni, Cr, Mo, and Pt is then deposited on the thin film 2 of the alloy. The films are subjected to the heat treatment in an inert gas or vacuum of 350 to 600 deg.C, by which the ohmic electrode of the p type CBN is formed. The p type cBN electrode which has the good ohmic characteristic and is flat is obtd. in this way and, therefore, this electrode is effectively utilizable for the production of semiconductor devices for which the cBN crystal is used.
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