| 摘要 |
PURPOSE:To form resist pattern excellent in the development degree while restraining the influence of a substratum of high reflectivity, without increasing spreading process, by forming positive type resist on the substratum having a surface of high reflectivity, performing exposure and development with energy lower than adequate exposing energy, and eliminating the resist left in an exposed part by anisotropic etching. CONSTITUTION:As a substratum, the following are formed in order on a silicon substrate 2; pattern 4 of polycrystalline silicon, an interlayer insulating film 6, and a metal film 8 of high reflectivity. Positive type resist 10 is spread thereon, and prebaking and exposing are performed. In the above process, a filter 20 is arranged to reduce the incident light quantity. Illuminance and exposing time are so set that the exposing energy becomes adequate when the filter is not arranged. The resist 22 is left in the exposed region by development after exposure. Until said resist is eliminated, the whole resist surface is subjected to etching, thereby obtaining a resist pattern 10 which is little affected by the reflection from the sustratum surface. Said pattern is used as a mask, and a metal film pattern is formed by etching a substratum film 8. |
