| 摘要 |
PURPOSE:To enable multicolored light to be emitted simultaneously and efficiently by a single p-n junction by a method wherein the relations between Al mixed crystal ratio of a p-type Ga1-X1AlX1As layer, a p-type Ga1-X2AlX2As layer, a p-type Ga1-X3AlX3As layer, an n-type Ga1-YAlYAs layer on a GaAs single crystal substrate are specified. CONSTITUTION:At least a p-type Ga1-X1AlX1As layer 1, a p-type Ga1-X2AlX2As layer 2, a p-type Ga1-X3AlX3As layer 3, an n-type Ga1-YAlYAs layer 4 are successively epitaxial-grown on a GaAs single crystal substrate 11. The relations shown by the formulas I, II hold between the Al mixed crystal ratios X1-X3 of respective layers 1-4. Accordingly, the band gaps values of respective layers 1-4 are different from one another. Thus, light in different wavelengths can simultaneously and efficiently be emitted with a single p-n junction. |
