| 摘要 |
PURPOSE: To provide a step recovery diode which generates a steep step function output signal, by providing an intrinsic region of the first material, a highly doped p-type region of the second material, and a highly doped n-type region of the third material, for forming a step-like junction between each region. CONSTITUTION: A step recovery diode of double hetero structure using a low band gap material of GaAs and wide band gap material of Alx Ga1-x As comprises low band gap regions 50, 51, 54, 55, 56 and 59, wide band gap regions 52 and 58, and inclined band gap regions 53 and 57. The region 55 is an intrinsic region where both kinds of minor carriers bulk accumulation occurs under SRD forward bias. The wide band gap regions 52 and 58 constitute a potential barrier wall for effectively closing up the minor carriers. The regions 51 and 59 are contact regions for enabling formation of good ohmic contact to a metal contact point. |
