Integrated semiconductor waveguide/photodetector

摘要

An integrated waveguide/detector optical device is fabricated on a semiconductor substrate whose surface includes a step region. Guiding and absorbing layers are grown on the surface in sequence overlying the step region. This is done in a single epitaxial growth cycle. The absorbing layer is patterned to form a non-planar detector that overlies the guiding layer in the step region. Due to bending of the guiding layer in the step region, a strong coupling exists between the overlying detector and light propagating in the guiding layer. Easily fabricated integrated devices having short-length (high-speed) photodetectors are thereby made feasible.