| 摘要 |
PURPOSE:To increase a light-receiving area without increasing a substrate area by forming a light-receiving surface of a semiconductor substrate where a pn junction is formed in unevenness. CONSTITUTION:Light-receiving surfaces 8a and 8b of a light-receiving generation element 10 and a pn junction 3a are formed in triangular unevenness, thus increasing the light-receiving area essentially. That is, rumples are attached as in the light-receiving surfaces 8a and 8b and the relative angle between the light-receiving surface 8a and the light-receiving surface 8b is set to 90 degrees, thus increasing the surface of the light-receiving area by approximately 40% as compared with the one with a flat surface shape. In this case, the irradiation method of solar rays is discussed and solar rays 7a and 7b are slanted using a mirror, a prism, etc., thus enabling light to be irradiated vertically for each light-receiving surface 8a and 8b. |
