SEMICONDUCTOR DEVICE HAVING A MULTI-LAYERED WIRING STRUCTURE

摘要

A semiconductor device has a multi-layered wiring structure. This semiconductor device has an interlayer insulating film comprising a first insulating film (4) for protecting a first metal wiring layer (3a), a second insulating film (5) deposited on the first insulating film (4) by a substrate-bias applying method to flatten the interlayer insulating film and a third insulating film (6) deposited on the second insulating film (5) to improve the productivity by the same method as used to form the first insulating film (4).