| 摘要 |
A magnetic domain memory comprising a planar layer of magnetic material in which magnetic bubbles are moved by a rotating magnetic field in the plane of the layer. At least one circuit or path is provided for guiding the propagation of the bubbles in the layer. This path comprises an overlay pattern of magnetically soft material the periphery of which defines the travel of the bubbles. The surface area of the layer bounding the outside of the overlay pattern comprises an ion-implanted region. This magnetic bubble propagation circuit is made by forming a thin film pattern of a magnetically soft material, such as permalloy, on the surface of a layer of magnetic material, and then directing at the surface of this layer ions having a sufficiently high energy level so as to effect implantation thereof in the lattice structure of the magnetic layer while utilizing the pattern of magnetically soft material to block the ions from penetration of the magnetic layer underlying the pattern.
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