发明名称 Semiconductor device with current detecting function
摘要 A semiconductor device with a current detecting function in which in place of an external resistor for detecting an operation current such as drain current or collector current of a device such as an FET or bipolar transistor, a probe electrode is formed in proximity to the device depletion layer to connect therethrough with the device channel to generate a probe voltage corresponding to the operation current.
申请公布号 US4962411(A) 申请公布日期 1990.10.09
申请号 US19890307177 申请日期 1989.02.03
申请人 NIPPONDENSO CO., LTD. 发明人 TOKURA, NORIHITO;KUNO, HIRONARI;ITO, HIROYASU;SAITO, HIROHIKO;HARA, KUNIHIKO
分类号 H01L27/02;H01L29/78 主分类号 H01L27/02
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