发明名称 |
Semiconductor device with current detecting function |
摘要 |
A semiconductor device with a current detecting function in which in place of an external resistor for detecting an operation current such as drain current or collector current of a device such as an FET or bipolar transistor, a probe electrode is formed in proximity to the device depletion layer to connect therethrough with the device channel to generate a probe voltage corresponding to the operation current.
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申请公布号 |
US4962411(A) |
申请公布日期 |
1990.10.09 |
申请号 |
US19890307177 |
申请日期 |
1989.02.03 |
申请人 |
NIPPONDENSO CO., LTD. |
发明人 |
TOKURA, NORIHITO;KUNO, HIRONARI;ITO, HIROYASU;SAITO, HIROHIKO;HARA, KUNIHIKO |
分类号 |
H01L27/02;H01L29/78 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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