| 摘要 |
PURPOSE:To obtain memory cells suitable for high integration by a method wherein the first and second charge storing electrodes of first and second memory cells adjoining each other and having no common contact holes are formed over the first and second memory cell regions with a first capacitive insulating film, a facing electrode and a second capacitive insulating film between. CONSTITUTION:The capacitance part of a first memory cell 31 is composed of a first storing electrode 10 connected to a first diffused layer 5, a facing electrode 13 and a first capacitive insulating film 12 between them. The capacitance part of a second memory cell 32 is composed of a second storing electrode 18 connected to a second diffused layer 6, the facing electrode 13 and a second capacitive insulating film 14 between them. The first and second gate electrodes 4 and 4' of the switching transistors of the first and second memory cells 31 and 32 are connected to work lines and control charge transfer between third diffused layers 7 and 7' connected to a bit line 23 and the first and second storing electrodes 10 and 18. With this constitution, fine semiconductor memory cells suitable for high integration can be obtained. |
