| 摘要 |
PURPOSE:To make possible the compatibility of a reduction in a parasitic capacity between wires and the parasitic inductances of the wires and a reduction in the size of the constitution of the title device by a method wherein external connecting electrodes on a ceramic substrate and the electrode pads of a high-frequency semiconductor device are folded back and are bonded together by first and second wire loops formed by being subjected to step bonding on the wires which respectively draw a different locus. CONSTITUTION:External connecting electrodes 12 on a ceramic substrate 11 end electrode pads 14 of a high-frequency semiconductor device 13 are folded back in parallel and are bonded together by first and second wire loops 16 and 19 formed by being subjected to step bonding on wires 15. Moreover, the two wires 15 respectively draw a different locus, the amount of a current per one of the wires, which are separated from each other so as to cross in their height direction, is reduced, s skin effect is reduced end with e parasitic capacity between the wires 15 and the parasitic inductances of the wires 15 reduced, an increase in the areas of the electrodes 12 is prevented by the separation of the wires in their height direction and a reduction in the size of the constitution of a device is contrived. |
