| 摘要 |
PURPOSE:To enhance the accuracy of formed mask pattern, and to prevent X-ray absorbed material from remaining in the pattern by a method wherein the polycrystalline or single crystal thin SIC film and BNC film or BN film, and a polycrystalline or single crystal SIC film are grown successively. CONSTITUTION:A first SIC film 2 of prescribed thickness is grown on an Si substrate 1 using a high temperature CVD method at the prescribed temperature, the surface of said substrate 1 is formed into the mirror face having no recesses and projections, and an SIC film is formed on the region 1A located on the rear of the substrate 1 when the film 2 is formed. Then, a BNC film 3 of prescribed thickness is formed on the film 2 using a plasma CVD method, and a second SIC film 4 of the prescribed thickness is formed on the film 3 using the same method used in the process 1. Moreover, a Ta film 5, which is an X-ray absorbing material film in the prescribed thickness, is formed on the film 4 using a sputtering method. Besides, the region 1A on the rear of the substrate 1 is selectively etched using an RIE method, a ceramic ring 6 is adhered, the film 2 is exposed to the rear of the substrate 1, and the high preciseness of a mask pattern is achieved. |
