| 摘要 |
PURPOSE:To obtain a metal electrode and wiring of semiconductor device having always favorable ohmic contact by a method wherein the heat treatment is performed after a glass film containing impurities is formed on a mask layer having the extremely lower etching rate than the glass film containing impurities. CONSTITUTION:The silicon nitride film 7 is made to grow applying the chemical vapor phase growth method. After then, the phospho silicate glass (PSG) film 4 is made to grow applying the CVD method, and moreover patterning of the PSG film 4 is performed applying usual photolithography to form an electrode contact window. Then the heat treatment is performed at about 950- 1,100 deg.C to make the PSG film 4 to be molten and to be softened. Accordingly the PSG film 4 is made to have the smooth shape having roundness wholly. Then the whole surface is etched applying the plasma etching method using carbon tetrafluoride (CF4) as the etchant. Etching thereof is continued till the mask film 7 is removed. |
