FIELD EFFECT TRANSISTOR INTEGRATED CIRCUIT,申请号JP19890001840-传众专利搜索

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发明名称	FIELD EFFECT TRANSISTOR INTEGRATED CIRCUIT
摘要
申请公布号	JPH02182024(A)	申请公布日期	1990.07.16
申请号	JP19890001840	申请日期	1989.01.06
申请人	NEC CORP	发明人	UENO KAZUYOSHI
分类号	H01L27/095;H03K17/687;H03K19/0952	主分类号	H01L27/095
代理机构		代理人
主权项
地址

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