Plasma doping process and apparatus therefor

摘要

In a plasma doping process utilizing a radio frequency discharging in a vacuum by for doping an impurity into a semiconductor substrate, the radio frequency discharging is made intermittently and under controlling of average current of the discharging, thereby the impurity concentration is desirably controlled; and especially by selecting the vacuum in a range between 1x10-4-5x10-2 torr, undesirable deposition of the impurity on the substrate surface is evadable.