| 摘要 |
PURPOSE:To form a single crystalline Si film having satisfactory unformity and large grain size by forming a polycrystalline Si film in a groove formed on the surface of an amorphous insulating body, forming a region of seed crystal using Nd:YAG laser, then annealing with Ar laser. CONSTITUTION:A belt-like first groove 4 having W1 groove width and surrounded by >=4 groove walls is formed on the surface of a substrate of an amorphous insulating body, and a belt-like second groove 5 having W2 groove width (where W1>W2) and surrounded by four groove walls perpendicular to the bottom surface of the groove 4 is formed on at least a part of the bottom surface of the groove 4. Then, a polycrystalline Si film is deposited on the surface of the substrate, and the Si film which is not built-in in the groove 4, 5 and unnecessary for the formation of island Si film is removed by polishing. Thereafter, Nd dope YAG laser having 1.06mu wavelength is scanned in the region of the groove 5 in the direction X to form seed crystal 6. Further an island single crystalline Si film 7 built-in in the groove 4, 5 is formed by scanning with Ar laser or electron beam in the direction Y starting from the groove 5 region. |
